We offer a wide selection of patterned wafers essential for semiconductor process research and evaluation.

Manufactured under strict process control, our wafers ensure high quality and outstanding stability. From standard mask patterns to custom designs tailored for specific applications, we provide a diverse range of options to meet various research and development needs.

In addition to our standard lineup, we also accommodate custom specifications. Feel free to contact us to discuss your requirements!

●MIT 854/754 Pattern wafer

Cu CMP(TEOS Etch/Cu Fill), W CMP(TEOS Etch/W Fill), STI Patten(Poly-Si, HDP, SiN Fill etc.)

●MIT 864/764 Pattern wafer, AMT-STI, AMT-S3 Pattern wafer

STI, ILD Pattern(HDP, TEOS, SiN, Poly-Si Fill etc.)

●AMT 3D-ILD Pattern wafer

3D-ILD CMP Pattern wafer (1mm~ large features, 2um,3um Depth etc.)

●AMT Cu Hybrid Bonding CMP Pattern Wafer(min. 0.25um Hole)

Cu CMP(TEOS Etch/Cu Fill), W CMP(TEOS Etch/W Fill),

●AMT TSV Pattern

φ5um*50um Depth, φ10um*100um Depth etc.

●Fine French Pattern, Resist pattern, Bump, RDL wafer for Packaging development etc.

Fine French Pattern(min. 20nm L/S), RDL Pattern(L/S=5um), φ5um μ-Bump, φ25um Cu Pillar Bump etc.